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| SEMICONDUCTOR TECHNICAL DATA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A KTA1242D/L EPITAXIAL PLANAR PNP TRANSISTOR I J FEATURES hFE=100 320 (VCE=-2V, IC=-0.5A). Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). Q C H P F 1 2 F 3 L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -35 -20 -8 -5 -0.5 1.0 150 -55 150 Q UNIT V V V A A W A C I J DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.20 2.00 + _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M D 1. BASE 2. COLLECTOR 3. EMITTER DPAK D O H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 0.2 1.10 + _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.2 2.0 + _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX K 1. BASE 2. COLLECTOR 3. EMITTER E B ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification O:100~200, Y:160~320 ) TEST CONDITION VCB=-35V, IE=0 VEB=-8V, IC=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-4A IC=-3A, IB=-75mA VCE=-2V, IC=-4A VCE=-2V, IC=-0.5A VCB=-10V, IE=0, f=1MHz MIN. -20 -8 100 70 ICBO IEBO IPAK SYMBOL TYP. 170 62 MAX. -100 -100 320 -0.5 -1.5 - UNIT nA nA V V V(BR)CEO V(BR)EBO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob V V MHz pF 2003. 3. 27 Revision No : 4 1/2 KTA1242D/L I C - VCE -8 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) -150mA -100mA -70mA -50mA COMMON EMITTER Tc=25 C I C - VBE -8 -6 -6 C 100 -4 -30mA -20mA I B =-10mA -4 Tc= Tc=-25 C -2 0 -2 Tc=25 C COMMON EMITTER V CE =-2V 0 -2 -4 -6 -8 -10 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V) h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 1k DC CURRENT GAIN h FE 500 300 Tc=100 C Tc=25 C Tc=-25 C VCE(sat) - I C -3 COMMON EMITTER I C /I B =40 -1 -0.5 -0.3 Tc =1 00 C Tc=25 C Tc=-25 C 100 50 30 COMMON EMITTER VCE =-2V -0.1 -0.05 -0.03 -0.01 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) COLLECTOR POWER DISSIPATION P C (W) Pc - Ta 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ta =2 SAFE OPERATING AREA -20 COLLECTOR CURRENT I C (A) -10 -5 -3 -1 -0.5 -0.3 I C MAX.(PULSED) I C MAX. (CONTINUOUS) ** 10 m S* 100mS* D OC Tc PER =2 AT 5 C ION VCEO MAX. 5 C -0.1 -0.3 -0.5 * SINGLE PULSE Tc=25 C ** PULSE WIDTH=10ms(MAX) DUTY CYCLE=30%(MAX) CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -1 -3 -5 -10 -30 -50 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 4 2/2 |
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